BSS225L6327 datasheet

Маркировка

BSS225L6327
Производитель

Infineon Technologies
Описание

Infineon Technologies BSS225L6327 Mfr Package Description: LEAD FREE, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: FLAT Terminal Finish: MATTE TIN Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Power Dissipation Ambient-Max: 1 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.0900 A Feedback Cap-Max (Crss): 4.4 pF DS Breakdown Voltage-Min: 600 V Drain-source On Resistance-Max: 45 ohm
Количество страниц

9 шт.
Формат

PDF
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Размер файла

203,38 KB